Matrices of indium antimonide nanowires and their applications in microwave generators
نویسندگان
چکیده
منابع مشابه
Indium Antimonide Nanowires: Synthesis and Properties
This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is...
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A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin...
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Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphid...
متن کاملSynthesis, electronic properties, and applications of indium oxide nanowires.
Single-crystalline indium oxide nanowires were synthesized using a laser ablation method and characterized using various techniques. Precise control over the nanowire diameter down to 10 nm was achieved by using monodisperse gold clusters as the catalytic nanoparticles. In addition, field effect transistors with on/off ratios as high as 10(4) were fabricated based on these nanowires. Detailed e...
متن کاملNonlinear Photogeneration of Carriers in an Indium Antimonide Etalon
The photo-Hall technique has been used to investigate the properties of the InSb optical absorption band-edge. An accurate theoretical explanation of the linear absorption results is given, together with new data on the nonlinear aspects of the band-tail. A value of 1.1 x 10-18 for a has been calculated by monitoring the carrier generation during bistability.
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ژورنال
عنوان ژورنال: Nanoindustry Russia
سال: 2017
ISSN: 1993-8578
DOI: 10.22184/1993-8578.2017.77.6.96.108